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Slkor BTA41-800B

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Slkor BTA41-800B

Holding Current (Ih) : 80mA

Operating Temperature : -40℃~+125℃

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 40A

Peak off - state voltage(Vdrm) : 800V

SCR Type : -

Gate Trigger Voltage (Vgt) : 1.5V

Description : TRIAC 800V 40A Through Hole TO-3P-3

Mfr. Part # : BTA41-800B

Model Number : BTA41-800B

Package : TO-3P-3

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Product Overview

The BTA41 series is a range of 4 Quadrants TRIACs designed for various AC power control applications. These TRIACs offer high voltage ratings and robust performance, making them suitable for demanding industrial and consumer electronics.

Features

4 Quadrants TRIAC
High voltage ratings (800V, 1000V, 1200V, 1600V)
High surge current capability
Suitable for AC motor speed regulation and solid-state relays

Applications

Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on.

Product Attributes

Product Series

BTA41

Package Type

TO-3P

Brand

SLKOR

Website

www.slkormicro.com

Absolute Maximum Ratings

Parameter	Conditions	BTA41-800	BTA41-1000	BTA41-1200	BTA41-1600	Unit
VDRM / VRRM	Tj=25C unless otherwise specified	800	1000	1200	1600	V
IT(RMS)	Tc=110C	40	40	40	40	A
ITSM	tp=16.7ms/20ms, f=50/60Hz	400/420	400/420	400/420	400/420	A
It	tp=10ms	880	880	880	880	As
PG(AV)	Tj=125C	1	1	1	1	W
IGM	Tj=125C, tp=380us	4	4	4	4	A
Tj	Operating Junction Temperature	40~125	40~125	40~125	40~125	C
TSTG	Storage Temperature	40~150	40~150	40~150	40~150	C

Electrical Characteristics

Symbol	Parameter	Test Conditions	Value	Unit
IDRM	Repetitive Peak Off-State Current	Tc=25C	5	uA
IDRM	Repetitive Peak Off-State Current	Tc=125C	5	mA
IRRM	Repetitive Peak Reverse Current	Tc=25C	5	uA
IRRM	Repetitive Peak Reverse Current	Tc=125C	5	mA
VTM	Forward "on" voltage	IT=60A, tp=380us	1.55	V
VGT	Gate trigger voltage	VD=12V, RL=30	1.5	V
IGT	Gate trigger current	VD=12V, RL=30	50	mA
IH	Holding current	IT=0.2A	80	mA
VDG	Gate non-trigger voltage	ALL VD=VDRM, TJ=125C	0.2	V
dv/dt	Critical-rate of rise of commutation voltage	TJ=125C, VD=2/3VDRM, Gate open circuit	800	V/us
Rth(j-c)	Thermal resistance Junction to case		0.9	C/W
Rth(j-a)	Thermal resistance Junction to ambient		50	C/W

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